KMD6D0DN40Q mosfet equivalent, dual n-channel mosfet.
VDSS=40V, ID=6A. Drain-Source ON Resistance. RDS(ON)=38m (Max.) @VGS=10V RDS(ON)=50m (Max.) @VGS=4.5V Super High Dense Cell Design Very fast switching
MAXIMUM RATING (Ta.
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters.
FEATURES VDSS=40V, ID=6A. Drain-Source ON Resistance..
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