Datasheet4U Logo Datasheet4U.com

KHB9D5N20F2 - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Download the KHB9D5N20F2 datasheet PDF. This datasheet also covers the KHB9D5N20P variant, as both devices belong to the same n channel mos field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Description

KHB9D5N20P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB9D5N20P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent

Features

  • VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ. )=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KHB9D5N20P_KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KHB9D5N20F2
Manufacturer KEC
File Size 106.57 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KHB9D5N20F2 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KHB9D0N50F1 (KHB9D0N50F1 / KHB9D0N50P1) High Voltage MOSFETs KEC semiconductor
KHB9D0N50P1 (KHB9D0N50F1 / KHB9D0N50P1) High Voltage MOSFETs KEC semiconductor
KHB011N40F1 High Voltage MOSFETs KEC semiconductor
KHB011N40P1 High Voltage MOSFETs KEC semiconductor
KHB019N20F1 High Voltage MOSFETs KEC semiconductor

Other Datasheets by KEC

Part Number Description
KHB9D5N20F2 (KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB9D5N20F N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB9D5N20F1 (KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB9D5N20P N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB9D5N20P1 (KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA General Description KHB9D5N20P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB9D5N20P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. FEATURES VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ.)=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRAIN 3.
Published: |