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KHB5D0N50F2 - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Download the KHB5D0N50F2 datasheet PDF (KHB5D0N50F included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n channel mos field effect transistor.

Description

KHB5D0N50P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB5D0N50P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent

Features

  • VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V Qg(typ. ) = 21nC 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 +.

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Note: The manufacturer provides a single datasheet file (KHB5D0N50F_KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KHB5D0N50F2
Manufacturer KEC
File Size 525.13 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KHB5D0N50F2 Datasheet

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA General Description KHB5D0N50P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB5D0N50P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.5 @VGS = 10V Qg(typ.) = 21nC 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + MAXIMUM RATING (Tc=25 www.DataSheet4U.
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