KHB011N40F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR
VDSS(Min.)= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ.) =32.5nC K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05.
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