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KHB011N40F2 - N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Key Features

  • VDSS(Min. )= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ. ) =32.5nC K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + H K L M N O P Q 1 2 3.

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Datasheet Details

Part number KHB011N40F2
Manufacturer KEC
File Size 527.25 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KHB011N40F2 Datasheet

Full PDF Text Transcription for KHB011N40F2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for KHB011N40F2. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A KHB011N40P1 O C F E G B Q I DIM MILLIMETERS...

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STOR General Description A KHB011N40P1 O C F E G B Q I DIM MILLIMETERS _ 0.2 9.9 + A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ.) =32.5nC K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0

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