KF7N50I transistor equivalent, n channel mos field effect transistor.
VDSS(Min.)= 500V, ID= 5.5A RDS(ON)=1.0 (Max) @VGS =10V Qg(typ.) =16nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
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Drain-Source Voltage
Gate-Source Voltage
@TC=25
.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
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