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KF5N50FZA - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Download the KF5N50FZA datasheet PDF. This datasheet also covers the KF5N50FSA variant, as both devices belong to the same n channel mos field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

  • VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12nC trr(typ) = 150ns (KF5N50FSA) trr(typ) = 300ns (KF5N50FZA) @VGS = 10V KF5N50FZA/FSA N.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KF5N50FSA_KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KF5N50FZA
Manufacturer KEC
File Size 779.11 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF5N50FZA Datasheet

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Other Datasheets by KEC

Part Number Description
KF5N50FZ N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF5N50F N CHANNEL MOS FIELD EFFECT TRANSISTOR
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KF5N50FR N CHANNEL MOS FIELD EFFECT TRANSISTOR
KF5N50FS N CHANNEL MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.
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