KF4N80F transistor equivalent, n-channel mos field effect transistor.
VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)(Max)=2.6 Qg(typ.)= 17nC @VGS=10V
D N N
H
1
2
3
1. GATE 2. DRAIN 3. SOURCE
Q
A B C D E F G H J K L M N O Q R
.
A
KF4N80F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
C
F
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active pow.
Image gallery
TAGS
Download (Size : 382.76KB)