KF4N20LW transistor equivalent, n-channel mos field effect transistor.
VDSS(Min.)= 200V, ID= 1A Drain-Source ON Resistance : RDS(ON)=1.05 Qg(typ.) =2.9nC Vth(Max.)= 2V (max) @VGS =10V
KF4N20LW
N CHANNEL MOS FIELD EFFECT TRANSISTOR
MAXIMUM .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES
VDSS(Min.
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