KF4N20LI transistor equivalent, n-channel mos field effect transistor.
VDSS(Min.)= 200V, ID= 3.6A Drain-Source ON Resistance : RDS(ON)=1.15 Qg(typ.) =2.9nC Vth(Max.)= 2V (max) @VGS =10V
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KF4N20LD/I
N CHANNEL MOS FIELD EFFECT TRANSIST.
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES
VDSS(Min.
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