KF3N60P transistor equivalent, n-channel mos field effect transistor.
VDSS= 600V, ID= 3A Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL KF3N60P
KF3N60F
UNIT
D.
KF3N60P
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
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