KF2N60D transistor equivalent, n channel mos field effect transistor.
VDSS= 600V, ID= 2.0A RDS(ON)=4.4 (Max) @VGS = 10V Qg(typ) = 6.0nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS .
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