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KDV358 - SILICON EPITAXIAL PLANAR DIODE

Features

  • Good C-V Linearity. Low Series Resistance. : rS=0.4 Small Package : USC. (Max. ).

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Datasheet Details

Part number KDV358
Manufacturer KEC
File Size 360.05 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet download datasheet KDV358 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES Good C-V Linearity. Low Series Resistance. : rS=0.4 Small Package : USC. (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 150 -55 150 UNIT V KDV358 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK E A K F L B 1 G H 2 D MM 1. ANODE 2. CATHODE J C I DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6 USC Marking Type Name VJ Lot No.
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