KDV215E - SILICON EPITAXIAL PLANAR DIODE

KEC

Features

High Capacitance Ratio : C2V/C25V=6.5(Typ. ) Low Series Resistance : rS=0.4 (Typ. ) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.

KDV215E silicon epitaxial planar diode by KEC - Datasheet Preview

Datasheet Details

Part number	KDV215E
Manufacturer	KEC
File Size	347.31 KB
Description	SILICON EPITAXIAL PLANAR DIODE
Datasheet	KDV215E Datasheet

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Other Datasheets by KEC

Part Number	Description
KDV215	SILICON EPITAXIAL PLANAR DIODE
KDV214	VARIABLE CAPACITANCE DIODE
KDV214A	VARIABLE CAPACITANCE DIODE
KDV214E	VARIABLE CAPACITANCE DIODE
KDV214EA	SILICON EPITAXIAL PLANAR DIODE

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SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES High Capacitance Ratio : C2V/C25V=6.5(Typ.) Low Series Resistance : rS=0.4 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage VR Peak Reverse Voltage VRM Junction Temperature Tj Storage Temperature Range Tstg RATING 30 35(RL=10k ) 125 -55 125 UNIT V V KDV215E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B A GG C 1 2 D 1. ANODE 2. CATHODE E F DIM A B C D E F G MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.