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KDS221V - SILICON EPITAXIAL PLANAR DIODE

Features

  • Low Forward Voltage : VF=1.0V (Max. ). Small Package : VSM. 2 KDS221V.

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Datasheet Details

Part number KDS221V
Manufacturer KEC
File Size 93.27 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet download datasheet KDS221V Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Low Forward Voltage : VF=1.0V (Max.). Small Package : VSM. 2 KDS221V SILICON EPITAXIAL PLANAR DIODE E B 1 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (1 s) Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 20 20 200 * 100 * 300 * 100 150 -55 150 UNIT V V mA mA mA mW C P P DIM MILLIMETERS _ 0.05 A 1.2 + _ 0.05 B 0.8 + _ 0.05 C 0.5 + _ 0.05 0.3 + D _ 0.05 1.2 + E _ 0.05 G 0.8 + H 0.40 _ 0.05 J 0.12 + _ 0.05 K 0.2 + P 5 A G H K J D 3 1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2 2 1 VSM Note : * Unit Rating.
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