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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Ultra- Small Surface Mount Package
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current
VRM VR IFM IO
80 80 300* 100*
Surge Current (10mS)
IFSM
2*
Power Dissipation
PD 150
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* Unit Rating. Total Rating=Unit Rating 0.7
UNIT V V mA mA A mW
KDS123S
SILICON EPITAXIAL PLANAR DIODE
C N K J
A G H
D
E L BL
23 1
Q PP
M
1. CATHODE 2 2. ANODE 1 3. ANODE 2/CATHODE 1
DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.
KDS123S Datasheet
