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KDS121E - SILICON EPITAXIAL PLANAR DIODE

Key Features

  • °.
  • Small Package °.
  • Low Forward Voltage °.
  • Fast Reverse Recovery Time °.
  • Small Total Capacitance : ESM. : VF=0.9V (Typ. ). : trr=1.6ns(Typ. ). A G H 2 1 E B D 3 DIM A B C D E G H J : CT=0.9pF (Typ. ).

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Datasheet Details

Part number KDS121E
Manufacturer KEC
File Size 189.10 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet download datasheet KDS121E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KDS121E SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES °§ Small Package °§ Low Forward Voltage °§ Fast Reverse Recovery Time °§ Small Total Capacitance : ESM. : VF=0.9V (Typ.). : trr=1.6ns(Typ.). A G H 2 1 E B D 3 DIM A B C D E G H J : CT=0.9pF (Typ.). MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + 0.50 _ 0.05 0.13 + CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 85 80 300 * 100 * 2* 100 150 -55°≠150 UNIT V V mA mA A mW °… °… 1. ANODE 1 2. ANODE 2 3.