Click to expand full text
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: ESM.
Low Forward Voltage
: VF=0.92V (Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=2.2pF (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature
VRM VR IFM IO IFSM PD Tj
Storage Temperature Range
Tstg
Note : * Unit Rating. Total Rating=Unit Rating x 1.5
RATING 85 80
300 * 100 * 2* 100 150 -55 150
UNIT V V mA mA A mW
C
A G H
KDS120E
SILICON EPITAXIAL TYPE DIODE
E B
D 2 DIM MILLIMETERS
13
A 1.60+_ 0.20 B 0.85+_ 0.10
C 0.70+_ 0.10
D 0.27+_ 0.10
E 1.60+_ 0.10
F 0.39+_ 0.10
G 1.
KDS120E Datasheet
