The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING.
KDR730F
SCHOTTKY BARRIER TYPE DIODE
CATHODE MARK
C
D
FEATURES hLow Forward Voltage. hHigh Reliability. hSmall Package . hSuffix U : Qualified to AEC-Q101.
ex) KDR730F-RTK/HU
MAXIMUM RATING (Ta=25) CHARACTERISTIC
Reverse Voltage Average Forward Current Surge Current(10ms) Junction Temperature Storage Temperature Range
SYMBOL VR IO IFSM Tj Tstg
RATING 30 100 500 125
-55q125
UNIT V mA mA
B A
H
G
F
E
DIM A B C D E F G H
MILLIMETERS 1.00+_ 0.05
0.80+0.10/-0.05 0.60+_ 0.05 0.30+_ 0.05
0.40 MAX 0.13+_ 0.05 0.10 MAX
0.25 MAX
TFSC
Marking
Type Name
Q
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Forward Voltage
VF
Reverse Current
IR
TEST CONDITION IF=10mA VR=10V
MIN. -
TYP.
KDR730F Datasheet
