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SEMICONDUCTOR
TECHNICAL DATA
KDR411
SCHOTTKY BARRIER TYPE DIODE
LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY.
FEATURES Small Surface Mounting Type. (USM) Low Forward Voltage : VF max=0.5V High Reliability
CONSTRUCTION Silicon epitaxial planar.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Peak Reverse Voltage DC Reverse Voltage Average Forward Current Peak Forward Surge Current Junction Temperature Storage Temperature Range
SYMBOL VRM VR IO IFSM Tj Tstg
RATING 40 20 0.5 3 125
-40 +125
UNIT V V A A
A J G
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2 B 1.25+_ 0.15
13
C 0.90+_ 0.10 D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65 P H 0.15+0.1/-0.06
J 1.30
K 0.00~0.10
C L
L HM
0.70 0.42 +_0.10
NK
N
N 0.10 MIN P 0.1 MAX
1. NC 2. ANODE 3. CATHODE
3 21
USM
Marking
Lot No.
KDR411 Datasheet
