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2N5551S Datasheet, KEC

2N5551S transistor equivalent, epitaxial planar npn transistor.

2N5551S Avg. rating / M : 1.0 rating-112

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2N5551S Datasheet

Features and benefits

High Collector Breakdwon Voltage : VCBO=180V, VCEO=160V Low Leakage Current. : ICBO=50nA(Max.) VCB=120V Low Saturation Voltage : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA Low N.

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TAGS

2N5551S
EPITAXIAL
PLANAR
NPN
TRANSISTOR
KEC

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