KX105 transistor equivalent, gan hemt transistor.
High Small Signal Gain: 15 dB @ 4 GHz. High Output Power: 15W PSAT. High Breakdown Voltage, Efficiency and Temperature
Operation.
APPLICATIONS
Microwave Radios .
This transistor offers superior properties compared to silicon or gallium arsenide, including higher breakdown voltage,.
The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface‐Mount Technology (SMT) package for high reliability applications. This transistor offers superior properties compared to silicon or gallium arsenide.
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