KX105 datasheet, transistor equivalent, KCB

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Features and benefits

 High Small Signal Gain: 15 dB @ 4 GHz.  High Output Power: 15W PSAT.  High Breakdown Voltage, Efficiency and Temperature Operation. APPLICATIONS  Microwave Radios  .

Application

This transistor offers superior properties compared to silicon or gallium arsenide, including higher breakdown voltage,.

Description

The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface‐Mount Technology (SMT) package for high reliability applications. This transistor offers superior properties compared to silicon or gallium arsenide.

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