KT1151, KT1151-K Microwave Low Noise SiGe Heterojunction Bipolar Transistor

K-Line

KT1151 Description

Microwave Low Noise SiGe HBT KT1151 Spring 2012 KT1151 Microwave Low Noise SiGe Heterojunction Bipolar Transistor .
The KT1151 is a SiGe NPN HBT (Heterojunction bipolar transistor) designed for low noise high gain amplifier at CATV, UHF and VHF band.

KT1151 Features

* h Operation Voltage: 10 V h Operating Temperature:
* 55℃ to +85℃ h Low Noise figure and High Gain NF=1.0dB (Typ), Ga=12dB (Typ) @VCE=10V,IC=7mA,f=1GHz h High Power Gain Gmax=14dB (Typ) @VCE=10V,IC=20mA,f=1GHz h Cost Effective 3-lead SOT23, 3-lead SOT323, 4- lead SOT143 package types Applica

📥 Download Datasheet

KT1151 Datasheet Preview — This datasheet PDF includes multiple part numbers: KT1151, KT1151-K. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: KT1151, KT1151-K
Manufacturer: K-Line
File Size: 500.56 KB
Datasheet: KT1151-K-LINE.pdf
Description: Microwave Low Noise SiGe Heterojunction Bipolar Transistor
Note: This datasheet PDF includes multiple part numbers: KT1151, KT1151-K.
Please refer to the document for exact specifications by model.

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Microwave Low Noise SiGe Heterojunction Bipolar Transistor K-Line

K-Line KT1151-like datasheet