KT1151 transistor equivalent, microwave low noise sige heterojunction bipolar transistor.
h Operation Voltage: 10 V h Operating Temperature:
–55℃ to +85℃ h Low Noise figure and High Gain
NF=1.0dB (Typ), Ga=12dB (Typ) @VCE=10V,IC=7mA,f=1GHz
h H.
h RF front end h Communication and instrument system h Satellite receiver
h Television antenna h Walkie-talkie and cord.
The KT1151 is a SiGe NPN HBT (Heterojunction bipolar transistor) designed for low noise high gain amplifier at CATV, UHF and VHF band. It has advantages such as low noise figure, high power gain, high voltage, broad dynamic range and good linearity. .
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