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KT1151 - Microwave Low Noise SiGe Heterojunction Bipolar Transistor

Download the KT1151 datasheet PDF. This datasheet also covers the KT1151-K variant, as both devices belong to the same microwave low noise sige heterojunction bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The KT1151 is a SiGe NPN HBT (Heterojunction bipolar transistor) designed for low noise high gain amplifier at CATV, UHF and VHF band.

It has advantages such as low noise figure, high power gain, high voltage, broad dynamic range and good linearity.

Key Features

  • h Operation Voltage: 10 V h Operating Temperature:.
  • 55℃ to +85℃ h Low Noise figure and High Gain NF=1.0dB (Typ), Ga=12dB (Typ) @VCE=10V,IC=7mA,f=1GHz h High Power Gain Gmax=14dB (Typ) @VCE=10V,IC=20mA,f=1GHz h Cost Effective 3-lead SOT23, 3-lead SOT323, 4- lead SOT143 package types.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KT1151-K-LINE.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KT1151
Manufacturer K-Line
File Size 500.56 KB
Description Microwave Low Noise SiGe Heterojunction Bipolar Transistor
Datasheet download datasheet KT1151 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Microwave Low Noise SiGe HBT KT1151 Spring 2012 KT1151 Microwave Low Noise SiGe Heterojunction Bipolar Transistor Features h Operation Voltage: 10 V h Operating Temperature: –55℃ to +85℃ h Low Noise figure and High Gain NF=1.0dB (Typ), Ga=12dB (Typ) @VCE=10V,IC=7mA,f=1GHz h High Power Gain Gmax=14dB (Typ) @VCE=10V,IC=20mA,f=1GHz h Cost Effective 3-lead SOT23, 3-lead SOT323, 4- lead SOT143 package types Applications h RF front end h Communication and instrument system h Satellite receiver h Television antenna h Walkie-talkie and cordless telephone h Remote controller and security apparatus Product Description The KT1151 is a SiGe NPN HBT (Heterojunction bipolar transistor) designed for low noise high gain amplifier at CATV, UHF and VHF band.