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Jin Yu Semiconductor

PT4410 Datasheet Preview

PT4410 Datasheet

N-Channel Enhancement Mode MOSFET

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30V N-Channel Enhancement Mode MOSFET
VDS= 30V
RDS(ON), Vgs@10V, Ids@12A = 10.5m
RDS(ON), Vgs@4.5V, Ids@12A = 15m
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
Package Dimensions
DD D D
8765
PT4410
12 3 4
SS SG
REF.
http://www.DataSheet4U.net/
A
B
C
D
E
F
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0° 8°
0.40 0.90
0.19 0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
TA = 25oC
TA = 75oC
VDS
VGS
ID
IDM
PD
30
± 20
12
48
2.5
1.2
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Avalanche Energy with Single Pulse
EAS
150
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted)
RθJC
RθJA
25
50
Unit
V
A
W
oC
mJ
oC/W
JinYu
semiconductor
www.htsemi.com
datasheet pdf - http://www.DataSheet4U.net/




Jin Yu Semiconductor

PT4410 Datasheet Preview

PT4410 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

30V N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
BVDSS VGS = 0V, ID = 250uA
RDS(on) VGS = 4.5V, ID = 12A
RDS(on) VGS = 10V, ID = 12A
VGS(th) VDS =VGS, ID = 250uA
IDSS VDS = 24V, VGS = 0V
IGSS VGS = ± 20V, VDS = 0V
gfs VDS = 15V, ID = 12A
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS = 15V, ID = 12A
VGS = 5V
VDD = 15V, RG = 6Ω
ID = 1A, VGS = 10V
VDS = 15V, VGS = 0V
f = 1.0 MHzhttp://www.DataSheet4U.net/
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD IS = 2A, VGS = 0V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
PT4410
Min.
Typ.
Max.
Unit
30 V
11.0 15.0
m
8.5 10.5
1 1.8 3
V
1
±100
uA
nA
64 S
12
4.5
3.6
22
13
82
30
1180
270
145
45
35
20
125
45
nC
ns
pF
2.0 A
1.5 V
JinYu
semiconductor
www.htsemi.com
datasheet pdf - http://www.DataSheet4U.net/


Part Number PT4410
Description N-Channel Enhancement Mode MOSFET
Maker Jin Yu Semiconductor
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