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Jiangsu Changjiang Electronics

C4115E Datasheet Preview

C4115E Datasheet

2SC4115E

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
2SC4115E TRANSISTOR
DESCRIPTION
NPN Epitaxial planar Silicon Transistor
www.DataShFeEetA4UT.UcoRmES
Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A)
APPLICATION
Excellent current gain characteristics
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:CFQ, CFR, CFS
C
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
TOP
C
BE
1. BASE
C
2. EMITTER
3. COLLECTOR BACK
EB
CFQ
BE
MAXIMUM RATINGS TA=25unless otherwise noted
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
40
20
6
3
PD Total Device Dissipation
150
TJ Junction Temperature
150
Tstg Storage Temperature
-55-150
Units
V
V
V
A
mW
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage*
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCEsat
Transition frequency
fT
Collector output capacitance
CLASSIFICATION OF hFE
Rank
Cobo
Q
Range
120-270
Test conditions
IC= 50µA , IE=0
IC= 1mA , IB=0
IE=50µA, IC=0
VCB=30V , IE=0
VEB= 5V , IC=0
VCE=2 V, IC= 0.1A
IC= 2A, IB=0.1A
VCE=2V, IC=0.5 A
f=100MHz
VCB=10V,IE=0,f=1MHz
R
180-390
MIN TYP
40
20
6
120
MAX
0.1
0.1
560
0.5
290
25
S
270-560
UNIT
V
V
V
µA
µA
V
MHz
pF




Jiangsu Changjiang Electronics

C4115E Datasheet Preview

C4115E Datasheet

2SC4115E

No Preview Available !

Typical Characteristics
www.DataSheet4U.com
2SC4115E


Part Number C4115E
Description 2SC4115E
Maker Jiangsu Changjiang Electronics
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C4115E Datasheet PDF






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