Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD1351
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
VBE Emitter-base on voltage
IC=0.5A ; VCE=5V
ICBO Collector cut-off current
VCB=60V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
www.DataSheeth4FUE .comDC current gain
Cob Output capacitance
IC=0.5A ; VCE=5V
IE=0; VCB=10V,f=1MHz
fT Transition frequency
IC=0.5A ; VCE=5V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IB1=-IB2=0.2A
VCC=30V;RL=15
Duty cycle 1%
hFE Classifications
OY
60-120
100-200
GR
150-300
MIN TYP. MAX UNIT
60 V
0.25 1.0
V
0.7 1.0
V
0.1 mA
0.1 mA
60 300
35 pF
3.0 MHz
0.65 s
1.30 s
0.65 s
JMnic
