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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SC4763
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
VEBO
Emitter-base breakdown voltage
VCEsat Collector-emitter saturation voltage
VBEsat Base-emitter saturation voltage
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
Cob Collector output capacitance
VF Forward voltage(damper diode)
fT Transition frequency
Switching times (inductive load)
ts Storage time
tf Fall time
CONDITIONS
IE=300mA ;IC=0
IC=6A; IB=1.2A
IC=6A; IB=1.2A
VCB=1500V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
IC=6A ; VCE=5V
IE=0 ; VCB=10V,f=1MHz
IF=6A
IE=0.1A ; VCE=10V
ICP=6A;IB1(end) =1.2A
fH=31.5kHz
MIN TYP. MAX UNIT
5V
5V
1.5 V
1 mA
83 250 mA
8 12
59
170 pF
1.3 1.8
V
13
MHz
4.7 6.0
0.2 0.5
s
s
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