Click to expand full text
R
SEMICONDUCTOR
FEATURES
For general purpose applications Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications These diodes are also available in the MinMELF case with type designation LL5711 and LL6263. High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-35 glass case Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
1N5711, 1N6263
SMALL SIGNAL SCHOTTKY DIODES
DO-35
JF
0.079(2.0) MAX DIA
1.083(27.5) MIN
0.
1N5711 Datasheet
