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JINAN JINGHENG

BZX55B8V2 Datasheet Preview

BZX55B8V2 Datasheet

SILICON PLANAR ZENER DIODES

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R
SEMICONDUCTOR
BZX55-B2V0 THRU BZX55-B200
0.5W SILICON PLANAR ZENER DIODES
FEATURES
DO-35
The zener voltage are graded according to the international E24
standard. Other voltage tolerance and higher zener voltages
are on request
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
MECHANICAL DATA
0.079(2.0)
MAX
DIA
1.083(27.5)
MIN
0.150(3.8)
MAX
Case: DO-35 glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
0.020(0.52)
MAX
DIA
1.083(27.5)
MIN
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES) (TA=25 C)
Symbols
Zener current see table "Characteristics"
Power dissipation
Ptot
Junction temperature
TJ
Storage temperature range
TSTG
1) Valid provided that a distance of 8mm from case is kept at ambient temperature
Value
5001)
175
-65 to+175
Units
mW
C
C
ELECTRICAL CHARACTERISTICS (TA=25 C)
Symbols
Min
Thermal resistance junction to ambient
R JA
Forward voltage at IF=100mA
VF
1) Valid provided that a distance of 8mm from case is kept at ambient temperature
Typ Max Units
3001)
1.0
K/W
V
JINAN JINGHENG ELECTRONICS CO., LTD.
10-6
HTTP://WWW.JINGHENGGROUP.COM




JINAN JINGHENG

BZX55B8V2 Datasheet Preview

BZX55B8V2 Datasheet

SILICON PLANAR ZENER DIODES

No Preview Available !

BZX55... SILICON PLANAR ZENER DIODES
Type
Zener Voltage range 1)
VZNOM
IZT for VZT
BZX55/B2V0
BZX55/B2V2
BZX55/B2V4
BZX55/B2V7
BZX55/B3V0
BZX55/B3V3
BZX55/B3V6
BZX55/B3V9
BZX55/B4V3
BZX55/B4V7
BZX55/B5V1
BZX55/B5V6
BZX55/B6V2
BZX55/B6V8
BZX55/B7V5
BZX55/B8V2
BZX55/B9V1
BZX55/B10
BZX55/B11
BZX55/B12
BZX55/B13
BZX55/B15
BZX55/B16
BZX55/B18
BZX55/B20
BZX55/B22
BZX55/B24
BZX55/B27
BZX55/B30
BZX55/B33
BZX55/B36
BZX55/B39
BZX55/B43
BZX55/B47
BZX55/B51
BZX55/B56
BZX55/B62
BZX55/B68
BZX55/B75
BZX55/B82
BZX55/B91
BZX55/B100
BZX55/B110
BZX55/B120
BZX55/B130
BZX55/B150
BZX55/B160
BZX55/B180
BZX55/B200
V mA
2.0 5
2.2 5
2.4 5
2.7 5
3.0 5
3.3 5
3.6 5
3.9 5
4.3 5
4.7 5
5.1 5
5.6 5
6.2 5
6.8 5
7.5 5
8.2 5
9.1 5
10 5
11 5
12 5
13 5
15 5
16 5
18 5
20 5
22 5
24 5
27 5
30 5
33 5
36 5
39 2.5
43 2.5
47 2.5
51 2.5
56 2.5
62 2.5
68 2.5
75 2.5
82 2.5
91 1
100 1
110 1
120 1
130 1
150 1
160 1
180 1
200 1
V
1.96…2.04
2.15…2.25
2.35…2.45
2.64…2.76
2.94…3.06
3.23…3.37
3.52…3.68
3.82…3.98
4.21…4.39
4.6…4.8
4.99…5.2
5.49…5.71
6.07…6.32
6.66…6.94
7.35…7.65
8.04…8.36
8.92…9.28
9.8…10.2
10.8…11.2
11.8…12.2
12.7…13.3
14.7…15.3
15.7…16.3
17.6…18.4
19.6…20.4
21.6…22.5
23.5…24.5
26.4…27.6
29.4…30.6
32.3…33.7
35.2…36.8
38.2…39.8
42.1…43.9
46…48
49.9…52.1
54.8…57.2
60.7…63.3
66.6…69.4
73.5…76.5
80.3…83.7
89.1…92.9
98…102
107.8…112.2
117.6…122.4
127.4…132.6
147…153
156.8…163.2
176.4…183.6
196…204
1) Teated with pulses tp=20ms.
JINAN JINGHENG ELECTRONICS CO., LTD.
Dynamic resistance
rZjt and rZjK at IZK
< 85
< 85
< 85
< 85
< 85
< 85
< 85
< 85
< 75
< 60
< 35
< 25
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
< 300
< 450
< 450
< 600
< 800
< 950
< 1250
< 1400
< 1700
< 2000
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
< 2000
< 5000
< 5000
< 5500
< 6000
< 6500
< 7000
< 8500
< 10000
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.25
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Reverse leakage current
IR and IR at VR
A AV
1 < 200 1
1 < 160 1
1 < 100 1
1 < 50 1
1 < 40 1
1 < 40 1
1 < 40 1
1 < 40 1
1 < 20 1
1 < 10 1
1 <2 1
1 <2 1
1 <2 2
1 <2 3
1 <2 5
1 < 2 6.2
1 < 2 6.8
1 < 2 7.5
1 < 2 8.2
1 < 2 9.1
1 < 2 10
1 < 2 11
1 < 2 12
1 < 2 13
1 < 2 15
1 < 2 16
1 < 2 18
1 < 2 20
1 < 2 22
1 < 2 24
1 < 2 27
0.5 < 5 30
0.5 < 5 33
0.5 < 5 36
0.5 < 10 39
0.5 < 10 43
0.5 < 10 47
0.5 < 10 51
0.5 < 10
0.25
< 10
0.1 < 10
0.1 < 10
0.1 < 10
56
62
68
75
82
0.1 < 10 91
0.1 < 10 100
0.1 < 10 110
0.1 < 10 120
0.1 < 10 130
0.1 < 10 150
Temp Coefficient
of zener voltage
TKVZ
%/K
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.06...-0.03
-0.05...+0.02
-0.02…+0.02
-0.05…+0.05
0.03…0.06
0.03…0.07
0.03…0.07
0.03…0.08
0.03…0.09
0.03…0.1
0.03…0.11
0.03…0.11
0.03…0.11
0.03…0.11
0.03…0.11
0.03…0.11
0.03…0.11
0.04…0.12
0.04…0.12
0.04…0.12
0.04…0.12
0.04…0.12
0.04…0.12
0.04…0.12
0.04…0.12
0.04…0.12
0.04…0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
0.05...0.12
10-7
HTTP://WWW.JINGHENGGROUP.COM


Part Number BZX55B8V2
Description SILICON PLANAR ZENER DIODES
Maker JINAN JINGHENG
Total Page 3 Pages
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