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SPE05M60T-A - Intelligent Power Module

Description

GND IC Common Supply Ground U Bias Voltage for U-Phase High-Side MOSFET Driving U Bias Voltage for U-Phase IC and Low-Side MOSFET Driving U Signal Input for U-Phase High-Side U Signal Input for U-Phase Low-Side No Connection V Bias Voltage for V-Phase High Side MOSFET Driving V Bias Voltage

Features

  • Signal high level valid, compatible with 3.3v and 5V MCU.
  • Lower arm MOSFET source electrode output.
  • Built-in bootstrap diode.
  • Built-in straight through protection.
  • Built-in undervoltage protection.
  • Internal integrated temperature detection output.
  • Resistant to high voltage 1500V SOP23-FP PIN1-PIN23 ORDER.

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Datasheet Details

Part number SPE05M60T-A
Manufacturer JILIN SINO
File Size 968.79 KB
Description Intelligent Power Module
Datasheet download datasheet SPE05M60T-A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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(IPM) Intelligent Power Module SPE05M60T-A/C MAIN CHARACTERISTICS 600V/5A VDSS ID IDM VISO 3 600V 2.4A 5A 1500V ● ● ● ● ● APPLICATIONS ● Refrigerator compressor ● Lampblack machine ● Electric fan ● Air purifier ● Dishwasher pump Package DIP23-FP ● ， 3.3V 5V MCU ● MOSFET ● ● ● ● ● 1500V FEATURES ● Signal high level valid, compatible with 3.
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