JCS7HN60C
Key Features
- Low gate charge
- Low Crss (typical 14pF )
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- V 击穿电压温度特性 Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃
- 0.65 - V/℃ 零栅压下漏极漏电流 Zero Gate Voltage Drain Current 正向栅极体漏电流 IDSS VDS=600V,VGS=0V, TC=25℃ VDS=480V, TC=125℃
- 100 μA Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V
- 100 nA 反向栅极体漏电流 Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V
- 1.26 1.6 Ω 正向跨导 Forward Transconductance gfs VDS = 40V, ID=7.0A（note 4）
