JCS730S
Key Features
- V 击穿电压温度特性 Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃
- 100 nA 反向栅极体漏电流 Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V
- 0.83 1.0 Ω 正向跨导 Forward Transconductance gfs VDS = 40V, ID=2.75A（note 4）
- 4.5 - S 动态特性 Dynamic Characteristics 输入电容 Input capacitance Ciss 输出电容 Output capacitance Coss VDS=25V, VGS =0V, f=1.0MHZ
- 85 110 pF 反向传输电容 Reverse transfer capacitance Crss
- 14 - nC 漏－源二极管特性及最大额定值 Drain-Source Diode Characteristics and 正向最大连续电流 Maximum Continuous Drain -Source Diode Forward Current IS
- 5.5 A 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current ISM
- 22 A 正向压降 Drain-Source Diode Forward VSD VGS=0V, IS=5.5A Voltage
- 1.5 V 反向恢复时间 Reverse recovery time 反向恢复电荷 Reverse recovery charge trr VGS=0V, IS=5.5A
- 265 - ns Qrr dIF/dt=100A/μs (note
