• Part: JCS630
  • Description: N-CHANNEL MOSFET
  • Category: MOSFET
  • Manufacturer: JILIN SINO-MICROELECTRONICS
  • Size: 2.02 MB
Download JCS630 Datasheet PDF
JILIN SINO-MICROELECTRONICS
JCS630
JCS630 is N-CHANNEL MOSFET manufactured by JILIN SINO-MICROELECTRONICS.
- Part of the JCS630-JILINSINO comparator family.
FEATURES - Low gate charge - Low Crss (typical 22p F ) - Fast switching - 100% avalanche tested - Improved dv/dt capability - Ro HS product 订货信息 ORDER MESSAGE 订货型号 Order codes JCS630V-O-V-N-B JCS630R-O-R-N-B JCS630R-O-R-N-A JCS630S-O-S-N-B JCS630B-O-B-N-B JCS630C-O-C-N-B JCS630F-O- F-N-B 印记 Marking JCS630V JCS630R JCS630R JCS630S JCS630B JCS630C JCS630F 封装 无卤素 包装 Package Halogen Free Packaging IPAK DPAK DPAK TO-263 TO-262 TO-220C TO-220MF 否 NO 否 NO 否 NO 否 NO 否 NO 否 NO 否 NO 条管 Tube 条管 Tube 编带 Brede 条管 Tube 条管 Tube 条管 Tube 条管 Tube 器件重量 Device Weight 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ) 版本:201505C 1/14 绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃) 数值 项目 Value 符 号 JCS630V/R JCS630S/B/C Parameter Symbol 最高漏极-源极直流电压 Drain-Source Voltage VDSS 连续漏极电流 Drain Current -continuous ID T=25℃ T=100℃ 9.0 5.7 最大脉冲漏极电流(注 1) Drain Current -pulse (note 1) 最高栅源电压 Gate-Source Voltage IDM VGSS 36 ±30 单脉冲雪崩能量(注...