JCS630
JCS630 is N-CHANNEL MOSFET manufactured by JILIN SINO-MICROELECTRONICS.
- Part of the JCS630-JILINSINO comparator family.
- Part of the JCS630-JILINSINO comparator family.
FEATURES
- Low gate charge
- Low Crss (typical 22p F )
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Ro HS product
订货信息 ORDER MESSAGE
订货型号 Order codes
JCS630V-O-V-N-B JCS630R-O-R-N-B JCS630R-O-R-N-A JCS630S-O-S-N-B JCS630B-O-B-N-B JCS630C-O-C-N-B JCS630F-O- F-N-B
印记 Marking
JCS630V JCS630R JCS630R JCS630S JCS630B JCS630C JCS630F
封装
无卤素
包装
Package Halogen Free Packaging
IPAK DPAK DPAK TO-263 TO-262 TO-220C TO-220MF
否 NO 否 NO 否 NO 否 NO 否 NO 否 NO 否 NO
条管 Tube 条管 Tube 编带 Brede 条管 Tube 条管 Tube 条管 Tube 条管 Tube
器件重量 Device Weight 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ)
版本:201505C
1/14
绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃)
数值
项目
Value 符 号 JCS630V/R JCS630S/B/C
Parameter
Symbol
最高漏极-源极直流电压 Drain-Source Voltage
VDSS
连续漏极电流 Drain Current -continuous
ID T=25℃ T=100℃
9.0 5.7
最大脉冲漏极电流(注 1) Drain Current -pulse (note 1) 最高栅源电压
Gate-Source Voltage
IDM VGSS
36 ±30
单脉冲雪崩能量(注...