JCS4N60B
Key Features
- Low gate charge
- Low Crss (typical 14pF )
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Derate 0.39 0.80 above 25℃ 最高结温及存储温度 Operating and Storage Temperature Range TJ，TSTG
- 10 μA - - 100 μA Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V
- 100 nA 反向栅极体漏电流 Gate-body leakage current, reverse IGSSR VDS=0V, VGS =-30V
- 710 920 pF - 65 85 pF 反向传输电容 Reverse transfer capacitance Crss
- 20 50 ns - 55 120 ns - 70 150 ns - 55 120 ns 栅极电荷总量 Total Gate Charge Qg VDS =480V
