• Part: JCS18N50WH
  • Description: N-CHANNEL MOSFET
  • Category: MOSFET
  • Manufacturer: JILIN SINO-MICROELECTRONICS
  • Size: 641.64 KB
Download JCS18N50WH Datasheet PDF
JILIN SINO-MICROELECTRONICS
JCS18N50WH
FEATURES z Low gate charge z Low Crss (typical 25p F ) z Fast switching z100% avalanche tested z Improved dv/dt capability z Ro HS product 封装 Package 订货信息 ORDER MESSAGE 订货型号 Order codes 印记 Marking JCS18N50WH-O-W-N-B JCS18N50WH 封装 Package TO-247 无卤素 Halogen Free 否 NO 包装 器件重量 Packaging Device Weight 条管 Tube 5.20g(typ) 版本:201105A 1/8 绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃) 项目 符号 Parameter 最高漏极-源极直流电压 Drain-Source Voltage Symbol VDSS 连续漏极电流 Drain Current -continuous ID T=25℃ T=100℃ 最大脉冲漏极电流(注 1) Drain Current -pulse (note 1) 最高栅源电压 Gate-Source Voltage VGSS 单脉冲雪崩能量(注 2) Single Pulsed Avalanche Energy(note 2) 雪崩电流(注 1) Avalanche Current (note 1) 重复雪崩能量(注 1) Repetitive Avalanche Current (note 1) 二极管反向恢复最大电压变化速率(注 3) Peak Diode Recovery dv/dt (note 3) dv/dt 耗散功率 Power Dissipation PD TC=25℃ -Derate above 25℃ 最高结温及存储温度 Operating and Storage Temperature Range TJ,TSTG 引线最高焊接温度 Maximum Lead Temperature for Soldering...