• Part: JCS10N60CT
  • Description: N-CHANNEL MOSFET
  • Category: MOSFET
  • Manufacturer: JILIN SINO-MICROELECTRONICS
  • Size: 1.03 MB
JCS10N60CT Datasheet (PDF) Download
JILIN SINO-MICROELECTRONICS
JCS10N60CT

Key Features

  • 100 nA 3.0 - 4.5 V
  • 1610 2065 pF
  • 12 - nC 漏-源二极管特性及最大额定值 Drain-Source Diode Characteristics and 正向最大连续电流 Maximum Continuous Drain -Source Diode Forward Current IS
  • 9.5 A 正向最大脉冲电流 Maximum Pulsed Drain-Source Diode Forward Current ISM
  • 38 A 正向压降 Drain-Source Diode Forward Voltage VSD VGS=0V, IS=9.5A
  • 1.05 1.4 V 反向恢复时间 Reverse recovery time trr VGS=0V, IS=9.5A 反向恢复电荷 Reverse recovery charge Qrr dIF/dt=100A/μs (note
  • 热特性 THERMAL CHARACTERISTIC