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1N4448WS Datasheet Preview

1N4448WS Datasheet

Silicon Epitaxial Planar Switching Diode

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Features
* Fast Switching Diode
* Marking Code: "W2"
1N4448WS
Silicon Epitaxial Planar Switching Diode
A
C
BD
Maximum Ratings (TA=25unless otherwise noted)
F
E
GH
SOD-323
INCHES
MM
DIM
MIN MAX MIN MAX
A
0.091
0.110
2.30
2.80
B
0.045
0.053
1.15
1.35
C
0.063
0.071
1.60
1.80
D
0.010
0.016
0.25
0.40
E
0.031
0.043
0.80
1.10
F
--- 0.006 ---
0.15
G
0.004
0.020
0.10
0.50
H
--- 0.004 ---
0.10
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Forward Current
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current (at t = 1 µs)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IF(AV)
IFM
IFSM
Pd
Tj
Tstg
Value
100
80
150
300
0.5
200
150
- 65 to + 150
Unit
V
V
mA
mA
A
mW
Version: 6.1
www.jgdsemi.com




JGD

1N4448WS Datasheet Preview

1N4448WS Datasheet

Silicon Epitaxial Planar Switching Diode

No Preview Available !

1N4448WS
Silicon Epitaxial Planar Switching Diode
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Forward Voltage
at IF = 5 mA
at IF = 10 mA
at IF = 100 mA
at IF = 150 mA
Reverse Leakage Current
at VR = 80 V
at VR = 20 V
at VR = 75 V, TJ = 150
at VR = 25 V, TJ = 150
Reverse Breakdown Voltage
at IR = 100 µA
Total Capacitance
at VR = 0.5 V, f = 1 MHz
Reverse Recovery Time
at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100
Symbol
VF
IR
V(BR)R
Ctot
trr
Ratings and Characteristic Curves
Min.
0.62
-
-
-
-
-
-
-
80
-
-
Max.
0.72
0.855
1
1.25
100
25
50
30
-
4
4
Unit
V
nA
nA
µA
µA
V
pF
ns
Version: 6.1
www.jgdsemi.com


Part Number 1N4448WS
Description Silicon Epitaxial Planar Switching Diode
Maker JGD
PDF Download

1N4448WS Datasheet PDF






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