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1N4148S Datasheet Preview

1N4148S Datasheet

Silicon Epitaxial Planar Switching Diode

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Features
* High-speed switching
* This diode is also available in MiniMELF case
with the type designation LL4148
Maximum Ratings (TA=25unless otherwise noted)
1N4148S
Silicon Epitaxial Planar Switching Diode
ABA
C
D Cathode Mark
DO-34
INCHES
MM
DIM
MIN MAX MIN MAX
A 1.083 --- 27.50 ---
B
--- 0.114 ---
2.90
C
--- 0.018 ---
0.45
D
--- 0.075 ---
1.90
Peak Reverse Voltage
Parameter
Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
at t = 1 s
at t = 1 ms
at t = 1 μs
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VRM
VR
IF(AV)
IFSM
Ptot
Tj
Tstg
Value
100
75
200
0.5
1
4
500 1)
200
- 65 to + 200
Note:1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Unit
V
V
mA
A
mW
Version: 6.1
www.jgdsemi.com




JGD

1N4148S Datasheet Preview

1N4148S Datasheet

Silicon Epitaxial Planar Switching Diode

No Preview Available !

1N4148S
Silicon Epitaxial Planar Switching Diode
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Min.
Max.
Reverse Breakdown Voltage
at IR = 100 µA
at IR = 5 µA
V(BR)R
100
75
-
-
Forward Voltage
at IF = 10 mA
Leakage Current
at VR = 20 V
at VR = 75 V
at VR = 20 V, Tj = 150
Capacitance
at VR = 0, f = 1 MHz
VF -
1
IR
-
-
25
5
- 50
Ctot -
4
Voltage Rise when Switching ON
tested with 50 mA Forward Pulses tp = 0.1 s,
Rise Time < 30 ns, fp = 5 to 100 KHz
Vfr - 2.5
Reverse Recovery Time
at IF = 10 mA to IR = 1 mA, Irr = 0.1 x IR, VR = 6 V, RL = 100
Thermal Resistance Junction to Ambient Air
trr
RthA
-4
- 0.35 1)
Rectification Efficiency
at f = 100 MHz, VRF = 2 V
ηV 0.45
-
Note: 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Unit
V
V
nA
µA
µA
pF
V
ns
K/mW
-
Version: 6.1
www.jgdsemi.com


Part Number 1N4148S
Description Silicon Epitaxial Planar Switching Diode
Maker JGD
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1N4148S Datasheet PDF






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