CJ2302 Datasheet Text
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2302 N-Channel 20-V(D-S) MOSFET
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING: S2
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature
Symbol
VDS VGS ID IS PD RθJA TJ TSTG
Value
20 ±8 2.1 0.6 0.35 357 150 -55 ~+150
Unit V
A W ℃/W ℃
A,Dec,2010
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Static Drain-source breakdown voltage Gate-threshold voltage Gate-body leakage Zero gate voltage drain current
Drain-source on-resistancea
Forward transconductancea
V(BR)DSS VGS(th) IGSS IDSS rDS(on) gfs
VGS = 0V, ID =10µA VDS...