The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-263-2L Plastic-Encapsulate Diodes
MBRB10100CT SCHOTTKY BARRIER RECTIFIER
FEATURE
Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling,
and Polarity Protection Applications
TO-263-2L
1. ANODE 2. CATHODE 3. ANODE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VRRM VRWM VR(RMS) IO IFSM
PD
RθJA
TJ Tstg
Parameter Peak repetitive reverse voltage Working peak reverse voltage RMS reverse voltage Average rectified output current Non-repetitive peak forward surge current @8.
MBRB10100CT Datasheet
