MBR30100FCT
FEATURES z Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications
TO-220F
1. ANODE 2. CATHODE 3. ANODE
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VRRM
Peak repetitive reverse voltage
VRWM VR
VR(RMS) IO
Working peak reverse voltage DC blocking voltage RMS reverse voltage Average rectified output current
IFSM Non-Repetitive peak forward surge current 8.3ms half sine wave
PD RΘJA
Tj Tstg
Power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature
Value
70 30 200 2 50 125 -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse voltage
V(BR)
IR=1m A
Reverse current
IR VR=100V
Forward...
