IRFB640 mosfet equivalent, n-channel mosfet.
at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220-3L.
1. GATE 2. DRAIN 3. SOURCE
Third Generation HEXFETs from internation Rectifier provide the
designer with the best combination of fast switching ,ruggedized device
design,low on-resistance and cost effectiveness.
The TO-220-3L package is universa.
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