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JCET

CJZM718 Datasheet Preview

CJZM718 Datasheet

N-Channel MOSFET and PNP Transistor

No Preview Available !

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3×2-8L-I Plastic-Encapsulate Transistors-MOSFETS
CJZM718 N-ch MOSFET and PNP Transistor
V(BR)DSS/BVCEO
20V
-25V
RDS(on)MAX
0.7Ω@4.5V
0.85Ω@2.5V  
/
ID/IC
0.5A 
-3A
DFNWB3×2-8L-I

 
 


& 
 
'  
 

 
FEATURE
High DC current gain
Low Threshold
Small package DFNWB3x2-8L-I
Including a CJP718 transistor and a CJ1012
MOSFET independently in a package
MARKING:
APPLICATION
Charging circuit
Other power management in portable equipments
Equivalent Circuit
C C SG
8 765
front
back
1 2 34
C E BD
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
Parameter
PNP Transistor
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
N-MOSFET
VDS
VGS
ID
IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
Drain Current - Pulse
Power Dissipation, Temperature and Thermal Resistance
PD Power Dissipation
RθJA
Thermal Resistance from Junction to Ambient (note1)
Thermal Resistance from Junction to Ambient (note2)
Tj Junction Temperature
Tstg Storage Temperature
TL Lead Temperature
Value
-25
-25
-7.5
-3
20
±6
0.5
2
1
175
110
150
-55~+150
260
www.cj-elec.com
1
Unit
V
V
V
A
V
V
A
A
W
/W
/W
C,Aug,2016




JCET

CJZM718 Datasheet Preview

CJZM718 Datasheet

N-Channel MOSFET and PNP Transistor

No Preview Available !

MOSFET ELECTRICAL CHARACTERISTICS
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ
Max
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO*
IC=-0.1mA, IE=0
IC=-10mA, IB=0
-25
-25
Emitter-base breakdown voltage
V(BR)EBO IE=-0.1mA, IC=0
-7.5
Collector cut-off current
ICBO VCB=-20V, IE=0
-25
Emitter cut-off current
IEBO VEB=-6V, IC=0
-25
VCE=-2V, IC=-0.01A
300
DC current gain
hFE *
VCE=-2V, IC=-0.1A
VCE=-2V, IC=-2A
300
150
VCE=-2V, IC=-6A
15
IC=-0.1A, IB=-10mA
-30
Collector-emitter saturation voltage
VCE(sat) *
IC=-1A, IB=-20mA
IC=-1.5A, IB=-50mA
-220
-250
IC=-2.5A, IB=-150mA
-350
Base-emitter saturation voltage
Base-emitter voltage
VBE(sat) *
VBE(on) *
IC=-3.5A, IB=-350mA
IC=-3.5A, IB=-350mA
VCE=-2V, IC=-3.5A
-380
-1.075
-0.95
Transition frequency
fT
VCE=-10V, IC=-50mA, f=100MHz
150
Unit
V
V
V
nA
nA
mV
mV
mV
mV
mV
V
V
MHz
N-ch MOSFET ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ
Max
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR)DSS VGS =0V, ID=250µA
20
Zero gate voltage drain current
IDSS VDS =16V, VGS = 0V
0.1
Gate-body leakage current
IGSS VGS =±4.5V, VDS = 0V
±1
Gate threshold voltage
VGS(th) VDS =VGS, ID =250µA
0.45 1.2
Drain-source on-resistance
RDS(on)
VGS =4.5V, ID =0.6A
VGS =2.5V, ID =0.5A
0.7
0.85
Forward tranconductance
Diode forward voltage
gfs
VSD *
VDS =10V, ID =0.4A
IS=0.15A, VGS = 0V
0.5
1.2
DYNAMIC PARAMETERS (note 3)
Input Capacitance
Output Capacitance
Ciss
Coss VDS =16V, VGS =0V, f =1MHz
100
16
Reverse Transfer Capacitance
Crss
12
SWITCHING PARAMETERS (note 3)
Turn-on delay time
Turn-on rise time
Turn-off delay time
td(on)
tr
td(off)
VDD=10V, VGEN=4.5V, RG=10,
RL=47, ID=0.2A
5
5
25
Turn-off fall time
tf
11
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg VDS =10V, VGS =4.5V,
Qgs ID =0.25A
Qgd
750
75
225
Note: 1. When mounted on a minimum pad.
2. When mounted on 1 in2 of 2oz copper board.
3. These parameters have no way to verify.
* Pulse test: pulse width300μs, duty cycle2%
Unit
V
µA
µA
V
S
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
www.cj-elec.com
2
C,Aug,2016


Part Number CJZM718
Description N-Channel MOSFET and PNP Transistor
Maker JCET
Total Page 7 Pages
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