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JCET

CJU80N03 Datasheet Preview

CJU80N03 Datasheet

N-Channel Power MOSFET

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU80N03
V(BR)DSS
30V
N-Channel Power MOSFET
RDS(on)MAX
6.5mΩ@10V
10mΩ@ 5V
 
 
ID
80A
TO-252-2L
DESCRIPTION
The CJU80N03 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications.
FEATURES
1. GATE
2. DRAIN
3. SOURCE
z High density cell design for ultra low RDS(ON)
z Fully characterized Avalanche voltage and current
z Excellent package for good heat dissipation
z Special process technology for high ESD capability
z Good stability and uniformity with high EAS
APPLICATIONS
z Power switching application
z Uninterruptible Power Supply
z Hard switched and high frequency circuits
MARKING
EQUIVALENT CIRCUIT
CJU80N03= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=20V,L=0.5mH, RG=25, Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
30
±20
80
320
306
1.25
100
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
/W
www.cj-elec.com
1
A,Mar,2016




JCET

CJU80N03 Datasheet Preview

CJU80N03 Datasheet

N-Channel Power MOSFET

No Preview Available !

026)(7(/(&75,&$/&+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
V(BR) DSS
IDSS
IGSS
VGS = 0V, ID =250µA
VDS =30V, VGS =0V
VDS =0V, VGS =±20V
On characteristics (note1)
Gate-threshold voltage
Static drain-source on-sate resistance
Forward transconductance
VGS(th)
RDS(on)
gFS
VDS =VGS, ID =250µA
VGS =10V, ID =30A
VGS =5V, ID =24A
VDS =5V, ID =24A
Dynamic characteristics (note 2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =15V,VGS =0V,
f =1MHz
Switching characteristics (note 2)
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Qg
Qgs
Qgd
td(on)
tr
td(off)
VDS=10V, VGS=10V,
ID=30A
VDD=15V,ID=30A,
VGS=10V,RG=2.7
Turn-off fall time
tf
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
Continuous drain-source diode forward
current
VSD
IS
Pulsed drain-source diode forward current
ISM
Notes:
1. Pulse Test : Pulse Width300µs, duty cycle 2%.
2. Guaranteed by design, not subject to production.
VGS =0V, IS=24A
Min Typ
Max Unit
30 V
1 µA
±100
nA
1.0 1.5
5.1
7.1
20
3.0 V
6.5 m
10 m
S
2330
460
230
pF
51
14 nC
11
20
15
ns
60
10
1.2 V
80 A
320 A
www.cj-elec.com
2
A,Mar,2016


Part Number CJU80N03
Description N-Channel Power MOSFET
Maker JCET
Total Page 5 Pages
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