CJU60N04 mosfet equivalent, n-channel power mosfet.
z High density cell design for ultra low RDS(ON)
z Fully characterized Avalanche voltage and current
z Good stability and uniformity with high EAS
APPLICATIONS
z Excelle.
TO-252-2L
1. GATE 2. DRAIN 3. SOURCE
FEATURES z High density cell design for ultra low RDS(ON)
z Fully characterized .
The CJU60N04 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
TO-252-2L
1. GATE 2. DRAIN 3. SOURCE
FEATURES z High density cell design for ultra low RDS(.
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