CJU55P30 mosfet equivalent, p-channel power mosfet.
z High density cell design for ultra low RDS(ON)
z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for.
TO-252-2L
FEATURES z High density cell design for ultra low RDS(ON)
z Fully characterized avalanche voltage and curre.
The CJU55P30 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
TO-252-2L
FEATURES z High density cell design for ultra low RDS(ON)
z Fully characterized a.
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