CJU20N06 mosfet equivalent, n-channel power mosfet.
FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltage and current z Good stab.
The CJU20N06 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche volta.
Image gallery
TAGS
Download (Size : 846.08KB)