CJU18P10 mosfet equivalent, p-channel power mosfet.
It is ESD protested.
1. GATE 2. DRAIN
3. SOURCE
FEATURE
* VDS =-100V,ID =-18A RDS(on) <100mΩ @ VGS=-10V (Typ:85mΩ.
The CJU18P10 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
1. GATE 2. DRAIN
3. SOURCE
FEATURE
* VDS =-100V,ID =-18A RDS(on) <.
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