CJQ08N02K mosfet equivalent, n-channel power mosfet.
* Advanced high cell density Trench technology
* Super Low Gate Charge
* Green Device Available
* High power and current handing capability
* Surface.
.It is ESD protested
FEATURES
* Advanced high cell density Trench technology
* Super Low Gate Charge
* Gre.
The device uses advanced trench technology to provide excellent RDS(ON),
SOP8
low gate charge and operation with gate voltages as low as 1.8V. This device is
suitable for use as a load switch or in PWM applications .It is ESD protested
FEATURES
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