CJPF55P30 datasheet, mosfet equivalent, JCET

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Features and benefits

z High density cell design for ultra low RDS(ON) z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package f.

Application

1. GATE 2. DRAIN 3. SOURCE FEATURES z High density cell design for ultra low RDS(ON) z Fully characterized avalanche.

Description

The CJPF55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. 1. GATE 2. DRAIN 3. SOURCE FEATURES z High density cell design for ultra low RDS(ON) z F.

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