CJP80N03 mosfet equivalent, n-channel power mosfet.
1. GATE 2. DRAIN
3. SOURCE
123
z High density cell design for ultra low RDS(ON)
z Fully characterized Avalanche voltage and current
z Excellent package for good heat .
FEATURES
1. GATE 2. DRAIN
3. SOURCE
123
z High density cell design for ultra low RDS(ON)
z Fully characterized Avala.
The CJP80N03 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications. FEATURES
1. GATE 2. DRAIN
3. SOURCE
123
z High density cell design for ultra low RDS(ON)
z.
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